SPB18P06PGATMA1
Infineon Technologies
English
Part Number: | SPB18P06PGATMA1 |
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Manufacturer/Brand: | Cypress Semiconductor (Infineon Technologies) |
Part of Description: | MOSFET P-CH 60V 18.7A D2PAK |
Datasheets: |
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RoHs Status: | ROHS3 Compliant |
ECAD Model: | |
Payment: | PayPal / Credit Card / T/T |
Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
Share: |
Ship From: Hong Kong
Quantity | Unit Price |
---|---|
1+ | $1.48 |
10+ | $1.322 |
100+ | $1.0305 |
500+ | $0.8513 |
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Product Attribute | Attribute Value |
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Vgs(th) (Max) @ Id | 4V @ 1mA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO263-3 |
Series | SIPMOS® |
Rds On (Max) @ Id, Vgs | 130mOhm @ 13.2A, 10V |
Power Dissipation (Max) | 81.1W (Ta) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Product Attribute | Attribute Value |
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Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 18.7A (Ta) |
Base Product Number | SPB18P06 |
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